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| TLP206G TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET TLP206G PBX ModemFAX Card Measurement Instrument Unit in mm The TOSHIBA TLP206G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 pin SOP. The TLP206G is a 2-Form-A switch which is suitable for replacement of mechanical relays in many application. * * * * * * * * * * SOP 8 pin (2.54SOP8): 2-Form-A Peak off-state voltage: 350V(min) Trigger LED current: 3mA(max) On-state current: 120mA(max) On-state resistance: 35(max) Isolation voltage: 1500Vrms(min) UL recognized: UL1577, file no.E67349 BSI approved: BS EN60065: 1994,certificate no.8273 BS EN60950: 1992,certificate no.8274 SEMKO approved: SS EN60065 SS EN60950 Option(V4)type TUV approved: DIN VDE0884 / 06.92, certificate No. R9850580 JEDEC EIAJ TOSHIBA Weight: 0.2 g Schematic 2-Form-A 1, 3 6, 8 8 7 6 5 Pin Configuration (top view) 1 8 2 7 1 2, 4 5, 7 2 3 4 3 6 4 1, 3: Anode 2, 4: Cathpde 5: Drain D1 6: Drain D2 7: Drain D3 8: Drain D4 5 1 2002-09-25 TLP206G Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 25C) LED Pulse forward current (100s pulse, 100pps) Reverse voltage Junction temperature Off-state output terminal voltage Detector On-state current On-state RMS current derating(Ta 25C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., R.H. 60%) (Note 2) Both channel One channel Both channel One channel (Note 1) (Note 1) Symbol IF IF / C IFP VR Tj VOFF ION Rating 50 -0.5 1 5 125 350 100 120 -1.0 -1.2 125 -55~125 -40~85 260 1500 Unit mA mA / C A V C V mA ION / C Tj Tstg Topr Tsol BVS mA / C C C C C Vrms (Note 1): Two channels operating simultaneously. (Note 2): Device considered a two-terminal device: Pins1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current On-state current Operating temperature Symbol VDD IF ION Topr Min. 5 -20 Typ. 7.5 Max. 280 25 100 65 Unit V mA mA C 2 2002-09-25 TLP206G Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Detector Off-state current Capacitance Symbol VF IR CT IOFF COFF Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz VOFF = 350 V V = 0,f = 1MHZ Min. 1.0 -- -- -- -- Typ. 1.15 -- 30 -- 40 Max. 1.3 10 -- 1 -- Unit V A pF A pF Coupled Electrical Characteristics (Ta = 25C) Characteristic Trigger LED current On-state resistance Symbol IFT RON Test Condition ION = 120 mA ION = 120 mA, IF = 5 mA MIn. -- -- Typ. 1 22 Max. 3 35 Unit mA Isolation Characteristics (Ta = 25C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. -- 5x10 10 Typ. 0.8 10 14 Max. -- -- -- -- -- Unit pF Vrms Vdc 1500 -- -- -- 3000 3000 Switching Characteristics (Ta = 25C) Characteristic Turn-on time Turn-off time Symbol tON tOFF Test Condition RL = 200 VDD = 20 V, IF = 5 mA (Note 3) Min. -- -- Typ. 0.3 0.1 Max. 1 1 Unit ms (Note 3): Switching time test circuit IF 1, 3 6, 8 RL VDD VOUT 90% 10% tOFF IF 2, 4 5, 7 VOUT tON 3 2002-09-25 TLP206G IF - Ta 100 140 ION - Ta Allowable MOSFET on-state current ION(RMS) (mA) 120 100 80 60 40 20 0 20 Allowable forward current IF (mA) 80 60 40 20 0 20 0 20 40 60 80 100 120 0 20 40 60 80 100 Ambient temperature Ta (C) Ambient temperature Ta (C) IFP - DR 5000 3000 Pulse width 100s Ta = 25C 1000 500 300 100 50 30 Ta = 25C IF -VF Allowable pulse forward current IFP (mA) (mA) Forward current IF 3 10 5 3 100 50 30 1 0.5 0.3 0.1 0.6 10 3 10 3 10 2 3 10 1 3 10 0 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) VF / Ta - IF 1000 2.8 500 300 IFP - VFP Forward voltage temperature coefficient VF / Ta (mV / C) 2.4 IFP Pulse forward current 2.0 1.6 1.2 (mA) 100 50 30 10 5 3 0 0.6 Pulse width 10s Repetitive frequency = 100Hz Ta = 25C 0.8 0.4 0.1 0.3 0.5 1 3 5 10 30 50 1.0 1.4 1.8 2.2 2.6 3.0 Forward current IF (mA) Pulse forward voltage VFP (V) 4 2002-09-25 TLP206G IFT - Ta 5 ION = 120mA 150 Ta = 25C IF = 5mA 100 ION - VON (mA) ION MOSFET on-state current Relative trigger LED current IFT / IFT (Ta = 25C) 4 50 3 0 2 50 1 100 0 40 20 0 20 40 60 80 100 150 2.5 1.5 0.5 0.5 1.5 2.5 Ambient temperature Ta (C) MOSFET on-state voltage VON (V) RON - Ta 40 1000 IOFF - Ta (mA) VOFF = 350V 500 300 () ION = 120mA IF = 5mA 30 RON ION 100 MOSFET on-state resistance MOSFET off-state current 50 30 20 10 5 3 1 20 10 0 40 20 0 20 40 60 80 100 0 20 40 60 80 100 Ambient temperature Ta (C) Ambient temperature Ta (C) tON - Ta 1000 VDD = 20V RL = 200 800 400 tOFF - Ta VDD = 20V RL = 200 IF = 5A 300 600 tOFF (ms) Turn-off time 0 20 40 60 80 100 tON (ms) IF = 5A Turn-on time 200 400 200 100 0 40 20 0 40 20 0 20 40 60 80 100 Ambient temperature Ta (C) Ambient temperature Ta (C) 5 2002-09-25 TLP206G RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-25 |
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